Epitaxial relationships and optical properties of Sn0₂ films deposited on sapphire substratesZHEN ZHU; JIN MA; CAINA LUAN et al.Applied surface science. 2011, Vol 257, Num 7, pp 2516-2519, issn 0169-4332, 4 p.Article

Modeling of the metalorganic chemical vapor deposition of tantalum oxide from tantalum ethoxide and oxygenMURALI, Sukanya; DESHPANDE, Anand; TAKOUDIS, Christos G et al.Industrial & engineering chemistry research. 2005, Vol 44, Num 16, pp 6387-6392, issn 0888-5885, 6 p.Article

MOCVD selective growth of orthorhombic or hexagonal YMnO₃ phase on Si(100) substrateILIESCU, I; BOUDARD, M; RAPENNE, L et al.Applied surface science. 2014, Vol 306, pp 27-32, issn 0169-4332, 6 p.Conference Paper

16th International Conference on Metalorganic Vapor Phase EpitaxyJONG KYU KIM; KUECH, Thomas F; CANEAU, Catherine et al.Journal of crystal growth. 2013, Vol 370, issn 0022-0248, 358 p.Conference Proceedings

Mixed amide-malonate compound of hafnium as a novel monomeric precursor for MOCVD of HfO₂ thin filmsMILANOV, A; BHAKTA, R; THOMAS, R et al.Journal of material chemistry. 2006, Vol 16, Num 5, pp 437-440, issn 0959-9428, 4 p.Article

Modelling of HfO₂ film deposition from Hf(MMP)4YANO, T; KAGATSUME, A; FUJIMOTO, T et al.Proceedings - Electrochemical Society. 2003, pp 437-442, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

XPS studies of copper deposition from 1,5-cyclooctadiene-copper(I)-hexafluoroacetylacetonate on Si(111)CHENG, T. Q; GRIFFITHS, K; NORTON, P. R et al.Applied surface science. 1998, Vol 126, Num 3-4, pp 303-308, issn 0169-4332Article

Catalyst-free MOCVD growth of aligned ZnO nanotip arrays on silicon substrate with controlled tip shapeYE, Z. Z; HUANG, J. Y; XU, W. Z et al.Solid state communications. 2007, Vol 141, Num 8, pp 464-466, issn 0038-1098, 3 p.Article

High-k dielectric materials by metalorganic chemical vapor deposition : Growth and characterizationTHOMAS, R; REGNERY, S; EHRHART, P et al.Ferroelectrics (Print). 2005, Vol 327, pp 111-119, issn 0015-0193, 9 p.Conference Paper

Nonpolar a-plane GaN grown on r-plane sapphire using multilayer AIN buffer by metalorganic chemical vapor depositionCHIANG, C. H; CHEN, K. M; WU, Y. H et al.Applied surface science. 2011, Vol 257, Num 7, pp 2415-2418, issn 0169-4332, 4 p.Article

The effects of substrate nitridation on the growth of nonpolar a-plane GaN on r-plane sapphire by metalorganic chemical vapor depositionJUN ZHANG; WU TIAN; CHANGQING CHEN et al.Applied surface science. 2014, Vol 307, pp 525-532, issn 0169-4332, 8 p.Article

In situ gas-phase FTIR monitoring of liquid delivery MOCVD process for PZT film preparationFUNAKUBO, Hiroshi; ASANO, Gouji; TONARI, Kazuaki et al.Chemical engineering journal (1996). 2008, Vol 135, Num 1-2, pp 10-14, issn 1385-8947, 5 p.Conference Paper

Mg_xZn_1-xO films grown by remote-plasma-enhanced MOCVD with EtCp₂MgYAMAMOTO, K; ENOMOTO, K; NAKAMURA, A et al.Journal of crystal growth. 2007, Vol 298, pp 468-471, issn 0022-0248, 4 p.Conference Paper

Microstructure, optical and electrical properties of Al-doped ZnO films grown by MOCVDJIANFENG SU; CHUNJUAN TANG; QIANG NIU et al.Applied surface science. 2012, Vol 258, Num 22, pp 8595-8598, issn 0169-4332, 4 p.Article

Structural and optical properties of Ga_2(1-x)In_2xO₃ films prepared on α-Al₂O₃ (0 0 01 ) bv MOCVDFAN YANG; JIN MA; CAINA LUAN et al.Applied surface science. 2009, Vol 255, Num 8, pp 4401-4404, issn 0169-4332, 4 p.Article

n-type CVD diamond doped with phosphorus using the MOCVD technology for dopant incorporationKOCINIEWSKI, T; BARJON, J; SAGUY, C et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 12, pp 3136-3141, issn 1862-6300, 6 p.Conference Paper

Growth of aluminum on Si using dimethyl-ethyl amine alaneNEO, Y; NIWANO, M; MIMURA, H et al.Applied surface science. 1999, Vol 142, Num 1-4, pp 443-446, issn 0169-4332Conference Paper

MOCVD of electroceramic oxides : A precursor manufacturer's perspectiveJONES, A. C.Chemical vapor deposition (Print). 1998, Vol 4, Num 5, pp 169-179, issn 0948-1907Article

Low pressure MOCVD of TiN thin filmsSO WON KIM; JIMBA, H; SEKIGUCHI, A et al.Applied surface science. 1996, Vol 100-01, pp 546-550, issn 0169-4332Conference Paper

Catkin liked nano-Co₃O₄ catalyst built-in organic microreactor by PEMOCVD method for trace CO oxidation at room temperatureCHEN, G. L; GUYON, C; ZHANG, Z. X et al.Microfluidics and nanofluidics (Print). 2014, Vol 16, Num 1-2, pp 141-148, issn 1613-4982, 8 p.Article

Deposition of LaAlO₃ films by liquid injection MOCVD using a new [La-Al] single source alkoxide precursorMANNING, Troy D; YIM FUN LOO; JONES, Anthony C et al.Journal of material chemistry. 2005, Vol 15, Num 33, pp 3384-3387, issn 0959-9428, 4 p.Article

Kinetic and mechanistic study on the chemical vapor deposition of titanium dioxide thin films by in situ FT-IR using TTIPAHN, Kvoung-Ho; PARK, Young-Bae; PARK, Dong-Wha et al.Surface & coatings technology. 2003, Vol 171, Num 1-3, pp 198-204, issn 0257-8972, 7 p.Article

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Processs optimization of copper MOCVD using modeling experimental designMOUCHE, M.-J; MERMET, J.-L; PIRES, F et al.Applied surface science. 1995, Vol 91, pp 129-133, issn 0169-4332Conference Paper

Vanadium oxides prepared by liquid injection MOCVD using vanadyl acetylacetonateVERNARDOU, D; PEMBLE, M. E; SHEEL, D. W et al.Surface & coatings technology. 2004, Vol 188-89, pp 250-254, issn 0257-8972, 5 p.Conference Paper